International conference on electronic spectroscopy and structure (ICESS-15) is a sequence of conference that gather the world's foremost experts on electronic structure and spectroscopy. This conference covers related to atomic and molecular science, photochemistry, quantum materials, imaging spectroscopies, novel instrumentation and nanomaterials. Special focus of the conference is highlighting the new developments and application using the new development of application of the use of synchrotrons radiation and free electron lasers around the globe. There was a comprehensive five-day agenda of plenary presentations and parallel and poster sessions showcasing the latest scientific advancements.
I presented electronic band structure of artificially designed three-dimensional (3D) Si{111} facet-lined structure on Si(110) and (001) substrate which we observed using Angle resolved photoemission spectroscopy (ARPES). Limited reports have been devoted to the development of 3D-Si structure. In this study, we initially demonstrated the creation of electronic bands on artificially designed 3D-Si facet surface. Two main focuses in this presentation; (1) The sufficient intensity of ARPES to measure artificially designed 3D-Si facet sample, and (2) Effect of steric hindrance of two sample with different facet angle (θF).
Our great result revealed that ARPES has enough intensity to observed surface and bulk dispersion Si{111}7×7 even in narrower facet surface area (2 µm facet pitch). We also have successfully measured band dispersion on 
point by optimizing θ for different θF.
There were many positive feedbacks from attendees regarding artificially designed 3D-Si{111} facet surface due to its unique geometrical structure and atomically flat Si{111}7×7 surface reconstruction. They also highlighted how the photon energy of ARPES exposed our 3D-Si sample as uncommon sample structure in this system. From these interactions, I received a suggestion related light source and its equipment facility place.
Attending the ICESS-15 has been a transformative experience. I was grateful and pleased to meet many experts in spectroscopy and structure field at this conference, including professor, postdoc researcher, and Ph.D students, not only from Asia but also from Europe and the US. I gained insight into the global trends in the field of electronic spectroscopy and structure, and I was also introduced to worldwide synchrotrons facilities which I was previously unfamiliar with. I realized that the limitation of my knowledge made me difficult to fully understand what they presented in plenary and parallel session. It gave me a signal to "work hard" in exploring this field further.
The discussion on poster session went smoothly and I confident that the valuable feedback from them will enhance our research performance in 3D-Si structure development, especially in electronic state properties.
In conclusion, I would like to convey my sincere gratitude to the foundation for supporting my involvement in this great conference.
